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Effects of arsenic implantation and rapid thermal annealing on ZnO nanorods for p-type doping
Journal of Vacuum Science & Technology B ( IF 1.4 ) Pub Date : 2020-09-01 , DOI: 10.1116/6.0000041
Jinseok Choi 1 , Sung Jin An 1
Affiliation  

Ion implantation is a useful method of fabricating p-type zinc oxide (ZnO) nanorods; however, it typically causes structural defects in the substrate material. Rapid thermal annealing (RTA) is a well-known annealing process in the semiconductor industry used to restore lattice defects, and it has the advantage of a fast processing time. Herein, we report on the effects of arsenic (As) implantation and RTA on ZnO nanorods for p-type doping. As+ ions were implanted using a mid-current ion implanter. A long-duration RTA of over 10 min that was used to activate the implanted As+ ions and recover the destroyed ZnO lattice changed the morphology of the As+-ion-implanted regions. The structural recovery after RTA at over 750 °C for 1 min was significant. In the low-temperature photoluminescence spectra, a new acceptor-bound exciton emission (A°X) peak associated with the As acceptor was observed. When RTA was conducted at 950 °C, p-type behavior of the As-doped ZnO nanorods could be observed, and the hole concentration was determined to be 6.311 × 1016 cm−3. This result indicates that the implanted As+ ions were activated as p-type dopants for 1 min.

中文翻译:

砷注入和快速热退火对 p 型掺杂 ZnO 纳米棒的影响

离子注入是制造 p 型氧化锌 (ZnO) 纳米棒的一种有用方法;然而,它通常会导致基板材料的结构缺陷。快速热退火 (RTA) 是半导体工业中众所周知的用于恢复晶格缺陷的退火工艺,具有处理时间快的优点。在此,我们报告了砷 (As) 注入和 RTA 对 p 型掺杂的 ZnO 纳米棒的影响。As+ 离子是使用中电流离子注入机注入的。用于激活注入的 As+ 离子并恢复被破坏的 ZnO 晶格的超过 10 分钟的长期 RTA 改变了 As+ 离子注入区域的形态。RTA 在超过 750 °C 1 分钟后的结构恢复是显着的。在低温光致发光光谱中,观察到与 As 受体相关的新受体结合激子发射 (A°X) 峰。在 950 °C 下进行 RTA 时,可以观察到 As 掺杂的 ZnO 纳米棒的 p 型行为,空穴浓度确定为 6.311 × 1016 cm-3。该结果表明注入的 As+ 离子被激活为 p 型掺杂剂 1 分钟。
更新日期:2020-09-01
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