Abstract Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5–15 μm wavelength region set by the doping level and the effective mass. Here, we demonstrate that volume plasmons can form in doped layers of widths of hundreds of nanometers, without the need of potential barrier for electronic confinement. Their strong interaction with light makes them perfect absorbers and therefore suitable for incandescent emission. Moreover, by injecting microwave current in the doped layer, we can modulate the temperature of the electron gas. We have fabricated devices for high frequency thermal emission and measured incandescent emission up to 50 MHz, limited by the cutoff of our detector. The frequency-dependent thermal emission is very well reproduced by our theoretical model that let us envision a frequency cutoff in the tens of GHz.

中文翻译：

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用于高频热发射的半导体量子等离子体

摘要 重掺杂半导体层中的等离子体是光学活性激发，在由掺杂水平和有效质量设定的 5-15 μm 波长范围内具有尖锐共振。在这里，我们证明了体积等离子体可以在数百纳米宽度的掺杂层中形成，而无需电子限制的势垒。它们与光的强烈相互作用使它们成为完美的吸收体，因此适用于白炽灯发射。此外，通过在掺杂层中注入微波电流，我们可以调节电子气的温度。我们制造了用于高频热发射的设备，并测量了高达 50 MHz 的白炽发射，受我们探测器截止频率的限制。