High-quality SnSe₂ single crystals were successfully synthesized using a temperature gradient method. N-type characteristics and strong anisotropic transport properties of SnSe₂ single crystals were exhibited between the ab plane and the c-axis. At 673 K, the power factor (PF) value along the ab plane is 3.43 μW cm^–1 K^–2, while it is 0.92 μW cm^–1 K^–2 along the c-axis. The ratio between thermal conductivities along the ab plane (κ_ab) and c-axis (κ_c) is on the order of 7.6 at 300 K, while this value is about 5.6 at 673 K. The thermoelectric figure of merit (ZT) in the c-axis (0.15) is higher than that (0.1) along the ab plane, according to the ultralow out-of-plane thermal conductivity. The electronic band structure results, which were examined by angle-resolved photoemission spectroscopy (ARPES) predicted the potential of improving the thermoelectric performance of SnSe₂ single crystals by electron doping.

中文翻译：

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高质量SnSe ₂单晶：电子和热电特性

使用温度梯度法成功合成了高质量的SnSe ₂单晶。在ab平面和c轴之间表现出SnSe ₂单晶的N型特性和强各向异性传输特性。在673 K时，沿ab平面的功率因数（PF）值为3.43μWcm ^–1 K ^–2，而沿c轴为0.92μWcm ^–1 K ^–2。热导率沿着ab面（κ之间的比率_AB）和Ç轴（κ _Ç）为7.6，在300°K的数量级上，而该值是约5.6在673 K的热电优值（ZT）在图中Ç轴（0.15沿着ab面）比（0.1以上），根据极低的平面外导热率。通过角度分辨光发射光谱法（ARPES）检查的电子能带结构结果预测了通过电子掺杂改善SnSe ₂单晶热电性能的潜力。