Abstract On the perspective to develop CuO–TiO2 MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25 keV Ar + ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400 °C for 24 h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu–Ti–O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication. GRAPHICAL ABSTRACT

中文翻译：

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用于化学电阻器应用的硅衬底上的多层 Cu-Ti 沉积

摘要 从开发 CuO-TiO2 MOS 的角度来看，使用 25 keV Ar + 离子束溅射在硅片上交替沉积多层 Cu 和 Ti 薄层，然后通过在空气中在 400 °C 下热退火 24 小时进行氧化。沉积的薄膜具有不同比例的 Cu 和 Ti % at。主要目标之一是获得这样的多层结构，避免 Cu-Ti-O 化合物的存在。样品在组成（通过 RBS 和 SIMS 分析）和形态（通过 AFM 和 SEM 研究）方面进行了表征。特别是，SIMS 图可以观察 Cu/Ti 多层膜各相的空间分布和厚度，并进一步观察 Cu 扩散和与 Ti 的混合，以及样品中 CuO 和 TiO2 的相分离。这种效应的原因代表了一个必须调查的未决问题，以改进MOS制造。图形概要