Abstract Surface modification of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) film was performed using chemical vapor texturing process of HNO3 vapor. Textured PEDOT:PSS film exhibits higher root-mean-square roughness of 14.43 nm than pristine PEDOT:PSS film of 11.87 nm with small decrease in thickness. Moreover, approximate one-half reduction of sheet resistance is measured. In correspondence with roughness, increasing optical transmittance in the visible region and reducing water contact angle are explored. The reduction of water contact angle implies that active layer can be deposited on the textured film with better coverage to improve interfacial contact for OPV fabricating process. This improvement facilitates charge transfer in OPV device which causes the increase of short-circuit current density (Jsc) from 7.42 mA/cm2 to 8.01 mA/cm2. The increased Jsc is the major photovoltaic parameter in OPV enhancement. Therefore, the PEDOT:PSS film textured with the chemical vapor texturing process is demonstrated as an efficient rough film for OPV enhancement. Furthermore, the rough film modified using the process could be suggested for applying in several thin-film based devices.

中文翻译：

---

PEDOT:PSS 薄膜的表面改性化学气相纹理工艺用于增强型有机光伏

摘要 采用 HNO3 蒸气的化学蒸气织构工艺对聚 (3,4-亚乙基二氧噻吩) 聚苯乙烯磺酸酯 (PEDOT:PSS) 薄膜进行表面改性。带纹理的 PEDOT:PSS 薄膜的均方根粗糙度为 14.43 nm，比原始 PEDOT:PSS 薄膜的 11.87 nm 更高，且厚度略有减少。此外，测量到薄层电阻降低了大约二分之一。与粗糙度相对应，探索了增加可见光区域的光学透射率和减少水接触角。水接触角的减小意味着活性层可以沉积在具有更好覆盖率的纹理薄膜上，以改善 OPV 制造过程的界面接触。这种改进促进了 OPV 器件中的电荷转移，从而导致短路电流密度 (Jsc) 从 7 增加。42 mA/cm2 至 8.01 mA/cm2。增加的 Jsc 是 OPV 增强的主要光伏参数。因此，通过化学气相纹理化工艺纹理化的 PEDOT:PSS 膜被证明是一种用于 OPV 增强的有效粗糙膜。此外，可以建议使用该工艺修改的粗糙薄膜应用于几种基于薄膜的器件。