TCAD modelling of InGaAs channel MOSFETs is a complex task due to the combined effect of quantization and interface or border traps, which affect the device electrostatics as well as the electron mobility through Coulomb scattering. In addition, trap distributions and mobility are strain-dependent. In this paper, we start from a microscopic physical approach, based on the use of Sentaurus SBand by Synopsys as 1D Schrödinger-Poisson solver and mobility calculator through the Kubo-Greenwood (KG) approach, to end up with a TCAD modelling framework that combines the Density Gradient (DG) model for quantum corrections with simple empirical expressions for the mobility model. Only the long-channel (or low-field) mobility is addressed. A distinctive feature of the paper is the use of experimental Hall electron density and mobility data as a reference for the calibration of interface traps and scattering rates in SBand. SBand simulation results for different strain levels and layer thicknesses are then used as the basis for the TCAD model calibration (DG and mobility). Our findings indicate that strain can increase mobility mainly through the reduction of Coulomb scattering with trapped charge.

InGaAs沟道MOSFET的TCAD建模是一项复杂的工作，这归因于量化和界面陷阱或边界陷阱的综合作用，这会影响器件的静电以及通过库仑散射产生的电子迁移率。另外，陷阱的分布和迁移率与应变有关。在本文中，我们从微观物理方法开始，基于Synopsys的Sentaurus SBand通过Kubo-Greenwood（KG）方法用作一维Schrödinger-Poisson求解器和迁移率计算器的方法，最后得到了一个TCAD建模框架，该框架结合了密度校正（DG）模型用于量子校正，具有用于迁移率模型的简单经验表达式。仅解决了长信道（或低场）移动性问题。该论文的一个显着特征是利用实验性霍尔电子密度和迁移率数据作为SBand中界面陷阱和散射速率校准的参考。然后将不同应变水平和层厚度的SBand模拟结果用作TCAD模型校准（DG和迁移率）的基础。我们的发现表明，应变可主要通过减少带电荷的库仑散射来增加迁移率。