This study synthesized and characterized Ag-doped ZnO thin films. Doped ZnO powders were synthesized using the sol-gel method, and thin films were fabricated using the doctor blade technique. The Ag content was determined by optical emission spectrometers with inductively coupled plasma (ICP plasma). Additionally, X-ray diffraction, Raman spectroscopy, Atomic Force Microscopy (AFM), diffuse reflectance, and X-ray photoelectron spectroscopy (XPS) measurements were used for physicochemical characterization. Finally, the photocatalytic degradation of methylene blue (MB) was studied under visible irradiation in aqueous solution. The Langmuir-Hinshelwood model was used to determine the reaction rate constant of the photocatalytic degradation. The physicochemical characterization showed that the samples were polycrystalline, and the diffraction signals corresponded to the ZnO wurtzite crystalline phase. Raman spectroscopy verified the ZnO doping process. The AFM analysis showed that roughness and grain size were reduced after the doping process. Furthermore, the optical results indicated that the presence of Ag improved the ZnO optical properties in the visible range, and the Ag-doped ZnO thin films had the lowest band gap value (2.95 eV). Finally, the photocatalytic degradation results indicated that the doping process enhanced the photocatalytic activity under visible irradiation, and the Ag-doped ZnO thin films had the highest MB photodegradation value (45.1%), as compared to that of the ZnO thin films (2.7%).

中文翻译：

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Ag掺杂ZnO薄膜在可见光照射下的亚甲基蓝光降解

本研究合成并表征了掺银 ZnO 薄膜。使用溶胶-凝胶法合成掺杂的 ZnO 粉末，并使用刮刀技术制造薄膜。Ag 含量通过具有电感耦合等离子体 (ICP 等离子体) 的光学发射光谱仪测定。此外，X 射线衍射、拉曼光谱、原子力显微镜 (AFM)、漫反射和 X 射线光电子能谱 (XPS) 测量用于物理化学表征。最后，在水溶液中在可见光照射下研究了亚甲基蓝（MB）的光催化降解。Langmuir-Hinshelwood 模型用于确定光催化降解的反应速率常数。理化表征表明样品为多晶，衍射信号对应于 ZnO 纤锌矿晶相。拉曼光谱验证了 ZnO 掺杂过程。AFM 分析表明，掺杂工艺后粗糙度和晶粒尺寸减小。此外，光学结果表明，Ag 的存在改善了可见光范围内的 ZnO 光学性能，Ag 掺杂的 ZnO 薄膜具有最低的带隙值（2.95 eV）。最后，光催化降解结果表明，掺杂过程增强了可见光照射下的光催化活性，与 ZnO 薄膜相比，Ag 掺杂的 ZnO 薄膜具有最高的 MB 光降解值（45.1%）。 ）。AFM 分析表明，掺杂工艺后粗糙度和晶粒尺寸减小。此外，光学结果表明，Ag 的存在改善了可见光范围内的 ZnO 光学性能，Ag 掺杂的 ZnO 薄膜具有最低的带隙值（2.95 eV）。最后，光催化降解结果表明，掺杂过程增强了可见光照射下的光催化活性，与 ZnO 薄膜相比，Ag 掺杂的 ZnO 薄膜具有最高的 MB 光降解值（45.1%）。 ）。AFM 分析表明，掺杂工艺后粗糙度和晶粒尺寸减小。此外，光学结果表明，Ag 的存在改善了可见光范围内的 ZnO 光学性能，Ag 掺杂的 ZnO 薄膜具有最低的带隙值（2.95 eV）。最后，光催化降解结果表明，掺杂过程增强了可见光照射下的光催化活性，与 ZnO 薄膜相比，Ag 掺杂的 ZnO 薄膜具有最高的 MB 光降解值（45.1%）。 ）。