Mathematical models for the Shubnikov-de Haas oscillations in semiconductors are obtained at the microwave-radiation absorption and its temperature dependence. Three-dimensional image of microwave magnetoabsorption oscillations in narrow-gap semiconductors is established. Using a mathematical model, the oscillations of the microwave magnetoabsorption are considered for different values of the electromagnetic field. The results of calculations are compared with experimental data. The proposed model explains the experimental results in HgSe at different temperatures.

中文翻译：

---

半导体中微波辐射吸收处的舒布尼科夫-德哈斯振荡

半导体中 Shubnikov-de Haas 振荡的数学模型是在微波辐射吸收及其温度依赖性下获得的。建立了窄隙半导体中微波磁吸收振荡的三维图像。使用数学模型，针对不同的电磁场值考虑微波磁吸收的振荡。计算结果与实验数据进行了比较。所提出的模型解释了 HgSe 在不同温度下的实验结果。