当前位置: X-MOL 学术Semicond. Sci. Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-09-24 , DOI: 10.1088/1361-6641/abab1f
Y Lechaux 1 , I iguez-de-la-Torre 2 , J A Novoa-Lpez 2 , Garca-Prez 3 , H Snchez-Martn 2 , J F Millithaler 4 , D Vaquero 1 , J A Delgado-Notario 1 , V Cleric 1 , T Gonzlez 2 , J Mateos 2
Affiliation  

In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods for the characterization of the oscillations that can be extended to the sub-THz frequency range. First, negative differential resistance and a current drop are found in the I–V curve, indicating the potential presence of Gunn oscillations (GOs), which is then confirmed by means of a vector network analyzer, used to measure both the S11 parameter and the noise power density. The onset of unstable GOs at applied voltages where the negative differential resistance is hardly visible in the I–V curve is evidenced by the observation of a noise bump at very low frequency for the same applied voltage range. Subsequently, the formation of stable oscillations with an almost constant frequency of 8.8 GHz is observed for voltages beyond the current drop. These results have been corroborated by measurements performed with a spectrum analyzer, which are fully consistent with the findings achieved by the other techniques, all of them applicable to Gunn diodes oscillating at much higher frequencies, even above 300 GHz.

中文翻译:

In0.53Ga0.47As 平面二极管中耿氏振荡的综合表征

在这项工作中,专门设计用于提供 30 GHz 以下频率振荡的 In0.53Ga0.47As 平面耿氏二极管已被制造和表征。不同类型的测量被用来定义一组一致的方法来表征可以扩展到亚太赫兹频率范围的振荡。首先,在 I-V 曲线中发现负微分电阻和电流下降,表明可能存在耿氏振荡 (GO),然后通过矢量网络分析仪进行确认,用于测量 S11 参数和噪声功率密度。在施加电压下出现不稳定的 GO,其中负微分电阻在 I-V 曲线中几乎不可见,这可以通过在相同施加电压范围内观察到极低频率下的噪声凸起来证明。随后,对于超过电流降的电压,观察到稳定振荡的形成,其频率几乎恒定为 8.8 GHz。这些结果已通过频谱分析仪进行的测量得到证实,这些结果与其他技术所获得的结果完全一致,所有这些结果都适用于以更高频率(甚至 300 GHz 以上)振荡的耿氏二极管。
更新日期:2020-09-24
down
wechat
bug