In this study, the thermal stability of a Si 0.7 Ge 0.3 /Si stacked multilayer for gate-all-around (GAA) MOSFETS is systematically investigated. Rapid thermal annealing (RTA) treatments at temperatures ranging from 800 °C to 1050 °C are performed on the Si 0.7 Ge 0.3 /Si stacked multilayer samples. Compared with the as-grown sample, the RTA-treated (800 °C–900 °C) Si 0.7 Ge 0.3 /Si stacked multilayer samples attain good crystal quality, a sharp interface between Si 0.7 Ge 0.3 and Si, and minor diffusion of Ge. Furthermore, owing to the rapid diffusion of Ge, the thickness of Si 0.7 Ge 0.3 increases by ∼6 nm and the Ge concentration of Si 0.7 Ge 0.3 reduces by ∼3% as the annealing temperature increases to 950 °C. The interfaces of the Si 0.7 Ge 0.3 /Si stacked multilayer disappear and finally behave like a homogeneous SiGe alloy as the annealing tempera...

中文翻译：

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围绕栅MOSFET的Si 0.7 Ge 0.3 / Si堆叠多层的热稳定性研究

在这项研究中，系统研究了全栅栅（GAA）MOSFET的Si 0.7 Ge 0.3 / Si堆叠多层的热稳定性。在Si 0.7 Ge 0.3 / Si堆叠的多层样品上进行800°C至1050°C温度范围内的快速热退火（RTA）处理。与生长后的样品相比，经RTA处理（800°C–900°C）的Si 0.7 Ge 0.3 / Si堆叠多层样品具有良好的晶体质量，Si 0.7 Ge 0.3和Si之间的尖锐界面以及少量的扩散。哥 此外，由于Ge的快速扩散，随着退火温度升高至950°C，Si 0.7 Ge 0.3的厚度增加了〜6 nm，Si 0.7 Ge 0.3的Ge浓度减少了〜3％。Si 0.7 Ge 0的界面。