Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS₂) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS₂ monolayers, the excitonic emission in few-layers MoS₂ has been largely unexplored. Here, we put forward a novel nano-heterojunction system, prepared with a non-lithographic process, to enhance and control such emission. It is based on the incorporation of few-layers MoS₂ into a plasmonic silver metaphosphate glass (AgPO₃) matrix. It is shown that, apart from the enhancement of the emission of both A- and B-excitons, the B-excitonic emission dominates the PL intensity. In particular, we observe an almost six-fold enhancement of the B-exciton emission, compared to control MoS₂ samples. This enhanced PL at room temperature is attributed to an enhanced exciton–plasmon coupling and it is supported by ultrafast time-resolved spectroscopy that reveals plasmon-enhanced electron transfer that takes place in Ag nanoparticles-MoS₂ nanoheterojunctions. Our results provide a great avenue to tailor the emission properties of few-layers MoS₂, which could find application in emerging valleytronic devices working with B excitons.

使用外部因素调整二维 (2D) 二硫化钼 (MoS ₂ ) 晶体中的光致发光 (PL) 特性对其在谷电子学、纳米光子和光电应用中的使用至关重要。尽管已经为增强或操纵 MoS ₂单层中的激子发射做出了重大努力，但在很大程度上尚未探索少层 MoS _{2 中}的激子发射。在这里，我们提出了一种采用非光刻工艺制备的新型纳米异质结系统，以增强和控制这种发射。它基于将几层 MoS _{2 结合}到等离子体偏磷酸银玻璃 (AgPO ₃） 矩阵。结果表明，除了增强 A 和 B 激子的发射外，B 激子发射主导 PL 强度。特别是，与对照 MoS ₂样品相比，我们观察到 B 激子发射几乎增加了六倍。这种在室温下增强的 PL 归因于增强的激子 - 等离子体耦合，它得到了超快时间分辨光谱的支持，该光谱揭示了在 Ag 纳米粒子-MoS ₂纳米异质结中发生的等离子体增强的电子转移。我们的结果提供了一个很好的途径来定制少层 MoS ₂的发射特性，这可以在使用 B 激子的新兴谷电子器件中找到应用。