Transistors, the most important logic elements, are maintained under dynamic influence during circuit operations. Practically, circuit design protocols and frequency responsibility should stem from a perfect agreement between the static and dynamic properties. However, despite remarkable improvements in mobility for organic semiconductors, the correlation between the device performances achieved under static and dynamic circumstances is controversial. Particularly in the case of organic semiconductors, it remains unclear whether parasitic elements that relate to their unique molecular aggregates may violate the radiofrequency circuit model. Thus, we herein report the manufacture of micrometre-scale transistor arrays composed of solution-processed organic semiconductors, which achieve near very high-frequency band operations. Systematic investigations into the device geometrical factors revealed that the radiofrequency circuit model established on a solid-state continuous medium is extendable to organic single-crystal field-effect transistors. The validity of this radiofrequency circuit model allows a reliable prediction of the performances of organic radiofrequency devices.

晶体管是最重要的逻辑元件，在电路操作期间保持在动态影响下。实际上，电路设计协议和频率责任应该源于静态和动态属性之间的完美一致性。然而，尽管有机半导体的迁移率有了显着提高，但在静态和动态环境下实现的器件性能之间的相关性仍存在争议。特别是在有机半导体的情况下，尚不清楚与其独特的分子聚集体相关的寄生元素是否可能违反射频电路模型。因此，我们在此报告了由溶液处理的有机半导体组成的微米级晶体管阵列的制造，该阵列实现了接近非常高的频带操作。对器件几何因素的系统研究表明，在固态连续介质上建立的射频电路模型可扩展到有机单晶场效应晶体管。这种射频电路模型的有效性允许对有机射频设备的性能进行可靠的预测。