Abstract A systematic study on structures and microwave dielectric properties of Ti-doped CeO2 ceramics with various Ti contents synthesized via the traditional solid-state reaction method was carried out in this work. A cubic fluorite structural solid solution was formed in the Ti content range of 0.05–0.1. X-ray photoelectron spectroscopy and Raman results indicated Ti3+ ions and oxygen vacancies appeared easily when the sintering temperature was beyond 1200 °C, which would significantly impact the quality factor ( Q × f ) property. The dielectric constant ( e r ) was positively correlated to the relative density and Ti content for all the samples. The temperature coefficient of resonant frequency ( τ f ) increased with the Ti content increasing, and came up to a near-zero value of −2.49 ppm/°C at the 0.875CeO2-0.125TiO2 composition with the e r of 27.38 and Q × f of 12,950 GHz, which could meet the actual requirements of microwave devices.

中文翻译：

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谐振频率接近零温度系数的掺钛CeO2陶瓷的结构和微波介电性能

摘要 本文系统研究了传统固相反应法合成的不同Ti含量的Ti掺杂CeO2陶瓷的结构和微波介电性能。在 Ti 含量范围为 0.05-0.1 时形成立方萤石结构固溶体。X 射线光电子能谱和拉曼结果表明，当烧结温度超过 1200 °C 时，很容易出现 Ti3+ 离子和氧空位，这将显着影响品质因数 ( Q × f ) 性能。介电常数 ( er ) 与所有样品的相对密度和 Ti 含量呈正相关。谐振频率的温度系数 ( τ f ) 随着 Ti 含量的增加而增加，并在 0.875CeO2-0 处达到接近零的值 -2.49 ppm/°C。