Abstract Interfacial effect of amorphous cobalt-iron-boron (Co60Fe20B20) films deposited on GaAs(001) by DC magnetron-sputtering has been precisely studied. In-plane uniaxial magnetic anisotropy (UMA) as a significant magnetic property has been found in Co60Fe20B20/GaAs heterostructure and the UMA field (Hu) of (∼75 Oe) is achieved. Magnetic Schottky barrier contact has been achieved by current-voltage (I–V) characteristic through the interface with a barrier height of 0.72 eV, which is an appropriate for tunneling injection of spin current from ferromagnet to semiconductors in spin-injection devices.

中文翻译：

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CoFeB/GaAs异质结界面效应研究

摘要 精确研究了直流磁控溅射在GaAs(001)上沉积非晶钴铁硼(Co60Fe20B20)薄膜的界面效应。已经在 Co60Fe20B20/GaAs 异质结构中发现了作为重要磁性的面内单轴磁各向异性 (UMA)，并且实现了 (~75 Oe) 的 UMA 场 (Hu)。磁性肖特基势垒接触是通过电流-电压 (I-V) 特性通过势垒高度为 0.72 eV 的界面实现的，这适用于自旋注入器件中从铁磁体到半导体的自旋电流隧道注入。