As one of the key neuronal activities associated with memory in the human brain, memory consolidation is the process of the transition of short-term memory (STM) to long-term memory (LTM), which transforms an external stimulus to permanently stored information. Here, we report the emulation of this complex synaptic function, consolidation of STM to LTM, in a single-crystal indium phosphide (InP) field effect transistor (FET)-based artificial synapse. This behavior is achieved via the dielectric band and charge trap lifetime engineering in a dielectric gate heterostructure of aluminum oxide and titanium oxide. We analyze the behavior of these complex synaptic functions by engineering a variety of action potential parameters, and the devices exhibit good endurance, long retention time (>10⁵ s), and high uniformity. Uniquely, this approach utilizes growth and device fabrication techniques which are scalable and back-end CMOS compatible, making this InP synaptic device a potential building block for neuromorphic computing.

中文翻译：

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在单个设备中工程复杂的突触行为：通过介电带工程在人工突触中模拟短期记忆到长期记忆的合并。

作为与人脑记忆相关的关键神经元活动之一，记忆巩固是短期记忆（STM）向长期记忆（LTM）过渡的过程，该过程将外部刺激转换为永久存储的信息。在这里，我们报告基于单晶磷化铟（InP）场效应晶体管（FET）的人工突触中这种复杂的突触功能的仿真，即STM到LTM的合并。此行为是通过在氧化铝和氧化钛的介电栅极异质结构中进行介电带和电荷陷阱寿命工程来实现的。我们通过设计各种动作电位参数来分析这些复杂的突触功能的行为，并且该装置具有良好的耐久性，较长的保留时间（> 10 ⁵s），且均匀度高。独特的是，这种方法利用了可扩展且与后端CMOS兼容的增长和设备制造技术，从而使该InP突触设备成为神经形态计算的潜在构建基块。