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Hall resistance anomalies in the integer and fractional quantum Hall regime
Physical Review B ( IF 3.7 ) Pub Date : 2020-09-23 , DOI: 10.1103/physrevb.102.115306 E. Peraticos , S. Kumar , M. Pepper , A. Siddiki , I. Farrer , D. Ritchie , G. Jones , J. Griffiths
Physical Review B ( IF 3.7 ) Pub Date : 2020-09-23 , DOI: 10.1103/physrevb.102.115306 E. Peraticos , S. Kumar , M. Pepper , A. Siddiki , I. Farrer , D. Ritchie , G. Jones , J. Griffiths
Experimental evidence of resistance anomalies in the high-mobility two-dimensional electron gas (2DEG) formed in the GaAs/AlGaAs heterostructure, in the integer and fractional quantized Hall regime, is shown. The data complement to a good approximation the semianalytic calculations used to describe the formation of integral and fractional incompressible strips. The widths of current-carrying channels were calculated by incorporating the screening properties of the 2DEG and the effect of a magnetic field in the perpendicular mode. The many-body effects of the composite fermions are taken into consideration for the energy gap for the fractional states. It is shown that incompressible strips at the edges for both integer and fractional filling factors coexist in their evanescent phase for a particular range of magnetic fields, resulting in overshoot effects at the Hall resistance. Specifically, anomalous Hall resistances were noticed for filling factors = , , , , 3, , , and 5. This effect is explained and discussed using the screening theory.
中文翻译:
整数和分数量子霍尔系统中的霍尔电阻异常
显示了在整数和分数量化霍尔模式下,GaAs / AlGaAs异质结构中形成的高迁移率二维电子气(2DEG)电阻异常的实验证据。该数据很好地近似了用于描述积分和分数不可压缩带的形成的半解析计算。载流通道的宽度是通过结合2DEG的屏蔽特性和垂直模式中的磁场影响来计算的。考虑了分数态的能隙,考虑了复合费米子的多体效应。结果表明,对于特定范围的磁场,整数和分数填充因子的边缘处的不可压缩条带在它们的van逝相中共存,在霍尔电阻处导致过冲效应。具体来说,发现霍尔系数异常是由于填充因子引起的 = , , , ,3, , 以及5.使用屏蔽理论来解释和讨论这种效果。
更新日期:2020-09-23
中文翻译:
整数和分数量子霍尔系统中的霍尔电阻异常
显示了在整数和分数量化霍尔模式下,GaAs / AlGaAs异质结构中形成的高迁移率二维电子气(2DEG)电阻异常的实验证据。该数据很好地近似了用于描述积分和分数不可压缩带的形成的半解析计算。载流通道的宽度是通过结合2DEG的屏蔽特性和垂直模式中的磁场影响来计算的。考虑了分数态的能隙,考虑了复合费米子的多体效应。结果表明,对于特定范围的磁场,整数和分数填充因子的边缘处的不可压缩条带在它们的van逝相中共存,在霍尔电阻处导致过冲效应。具体来说,发现霍尔系数异常是由于填充因子引起的 = , , , ,3, , 以及5.使用屏蔽理论来解释和讨论这种效果。