Phosphorus dopants and defects were successfully introduced to a manganese‐cobalt oxide (MCO) spinel via plasma treatment in the presence of NaH₂PO₂. High‐energy electrons generated by plasma can produce oxygen vacancy and embed phosphorus into the spinel. To balance the charge of lattice phosphorus, manganese and cobalt atoms left their original sites and deposited as MnO and CoP, thereby forming a disordered structure. Meanwhile, the oxidation state of cobalt increased. These changes provided extra active sites for electrochemical reaction and improved electrical conductivity. In addition, tunnels were formed on the surface, thus favoring mass transport in the electrolyte. Compared with pristine MCO, the spinel doped with phosphorus via plasma treatment showed higher oxygen evolution reaction performance, with a lower onset potential of 1.45 V, higher current density of 25.32 mA cm⁻² at 1.75 V, and smaller Tafel slope of 118.7 mV dec⁻¹. These findings can facilitate the development of high‐activity electrocatalysts with dopants and defects for energy storage and conversion systems.

中文翻译：

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掺P缺陷富锰钴氧化物尖晶石的简便路线及提高的析氧反应性能

在NaH ₂ PO ₂存在下通过等离子体处理将磷掺杂剂和缺陷成功地引入到锰钴氧化物（MCO）尖晶石中。等离子体产生的高能电子会产生氧空位并将磷嵌入尖晶石中。为了平衡晶格磷的电荷，锰和钴原子离开其原始位置并以MnO和CoP的形式沉积，从而形成无序结构。同时，钴的氧化态增加。这些变化为电化学反应提供了额外的活性位点，并提高了电导率。另外，在表面上形成隧道，因此有利于电解质中的质量传输。与原始MCO相比，通过等离子体处理掺入磷的尖晶石显示出更高的析氧反应性能，在1.75 V时具有较低的起始电势1.45 V，较高的电流密度为25.32 mA cm ^-2和较小的Tafel斜率dec 118.7 mV ^-1。这些发现可以促进具有掺杂剂和缺陷的高活性电催化剂的开发，以用于能量存储和转换系统。