Abstract Quaternary chalcogenide Cu2MgSnS4 (CMTS) thin films were grown by spray pyrolysis technique on glass substrates using methanol as solvent. CMTS thin films growth methodology has been based on three steps in order to optimize structural and optical properties. X-ray diffraction, Raman spectroscopy, Spectrophotometer and SEM were used to investigate physical properties of CMTS thin films. The first step was searching for optium substrate temperature by performing synthesis of CMTS thin films at different temperatures (250, 200, 175 and 150 °C). Structural analysis has shown that the best grain size was found for thin films deposited at 175 °C but with presence of secondary phases. The second step was a simultaneous decrease in solvent volume, sulfur and copper concentrations in order to remove undesirable phases. The third step was a vacuum annealing of CMTS thin films at different temperatures 225, 300, 375 and 450 °C for 1 h in order to improve more physical properties. XRD analysis have shown that vacuum annealing at 450 °C temperature has eliminated completely secondary phases and increased grain size up to 51.82 nm. During these steps, band gap energy has been varied from 1.33 eV to a maximum value of 1.91 eV with an absorption coefficient α value near 105 cm−1. These experimental results have shown that CMTS thin film was successfully grown by spray pyrolysis technique and can be considered as promising absorber for photovoltaic applications.

中文翻译：

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喷涂Cu2MgSnS4薄膜的物理性能随生长参数和真空退火的演变

摘要 以甲醇为溶剂，通过喷雾热解技术在玻璃基板上生长季硫属化物Cu2MgSnS4（CMTS）薄膜。CMTS 薄膜生长方法基于三个步骤，以优化结构和光学特性。X射线衍射、拉曼光谱、分光光度计和SEM被用来研究CMTS薄膜的物理性质。第一步是通过在不同温度（250、200、175 和 150 °C）下合成 CMTS 薄膜来寻找最佳衬底温度。结构分析表明，在 175 °C 下沉积的薄膜具有最佳晶粒尺寸，但存在第二相。第二步是同时降低溶剂体积、硫和铜浓度，以去除不需要的相。第三步是在 225、300、375 和 450°C 的不同温度下对 CMTS 薄膜进行真空退火 1 小时，以提高更多的物理性能。XRD 分析表明，在 450 °C 温度下真空退火已经完全消除了第二相，并将晶粒尺寸增加到 51.82 nm。在这些步骤中，带隙能量从 1.33 eV 变化到最大值 1.91 eV，吸收系数 α 值接近 105 cm-1。这些实验结果表明，CMTS 薄膜通过喷雾热解技术成功生长，可以被认为是有前途的光伏应用吸收剂。XRD 分析表明，在 450 °C 温度下真空退火已经完全消除了第二相，并将晶粒尺寸增加到 51.82 nm。在这些步骤中，带隙能量从 1.33 eV 变化到最大值 1.91 eV，吸收系数 α 值接近 105 cm-1。这些实验结果表明，CMTS 薄膜通过喷雾热解技术成功生长，可以被认为是有前途的光伏应用吸收剂。XRD 分析表明，在 450 °C 温度下真空退火已完全消除了第二相，并将晶粒尺寸增加到 51.82 nm。在这些步骤中，带隙能量从 1.33 eV 变化到最大值 1.91 eV，吸收系数 α 值接近 105 cm-1。这些实验结果表明，CMTS 薄膜通过喷雾热解技术成功生长，可以被认为是有前途的光伏应用吸收剂。