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An analytical study on low voltage regime of natural organic semiconductor based device: Physics of trap energy and ideality factor
Solid State Communications ( IF 2.1 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.ssc.2020.114080
K. Chakraborty , A. Das , R. Mandal , D.K. Mandal

Abstract Present investigation demonstrates the physics at low voltage region of natural organic semiconductor based single layer device. Theoretical explanation of diffusion driven current equations has been implemented as an efficient way to study the charge transport mechanism in that regime. GPVDM (abbreviated form of General purpose photovoltaic model), a renowned software simulation technique of organic devices has been introduced to obtain current voltage relationship and fitted with diffusion assisted equation. The plot shows high consistency with theoretical explanation which indicates reliability of the plot. Simulation based observation on trap assisted conduction at low voltage and its relation with corresponding ideality factor at that region has been explained on the basis of theoretical point of view. It has been found that ideality factor decays exponentially with increasing trap energy at low voltage. Experimental approach has finally been employed on Turmeric and Indigo dye based single layer natural semiconducting diodes to validate the outcome of the proposal. Results of the experiment lead to great similarity with the outcomes of both theoretical and simulation approach.

中文翻译:

基于天然有机半导体的器件低电压状态的分析研究:陷阱能物理和理想因子

摘要 目前的研究证明了基于天然有机半导体的单层器件在低压区的物理特性。扩散驱动电流方程的理论解释已被用作研究该状态下电荷传输机制的有效方法。引入了著名的有机器件软件模拟技术GPVDM(通用光伏模型的缩写)来获得电流电压关系并拟合扩散辅助方程。该图显示出与理论解释的高度一致性,表明该图的可靠性。从理论的角度解释了低电压陷阱辅助传导的模拟观察及其与该区域相应理想因子的关系。已经发现理想因子随着低电压下陷阱能量的增加呈指数衰减。最终在基于姜黄和靛蓝染料的单层天然半导体二极管上采用了实验方法来验证该提案的结果。实验结果与理论和模拟方法的结果非常相似。
更新日期:2021-01-01
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