Abstract This paper focuses on fabrication of submicron structures onto photoresist films by use of a continuous wave (CW) laser. Conventional CW laser fabrication has low accuracy, because the laser beam affects the periphery of a beam exposed area; it is unsuitable for three-dimensional submicrofabrication. Therefore, we have developed a high-accuracy exposure method with CW lasers that use controlling the reaction time constant of photoresists. This method makes it possible to restrict the exposure area by making the response of the photochemical reaction depend on the exposure intensity nonlinearly. In our study, we realized to expose the line pattern having 180 nm minimum width, which is smaller than the focused beam spot diameter, by using the CW laser with wavelength of 532 nm.

中文翻译：

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控制光刻胶反应时间常数的激光直接亚微米制造

摘要 本文重点研究了使用连续波 (CW) 激光器在光刻胶薄膜上制造亚微米结构。传统的连续波激光器制造精度低，因为激光束会影响光束暴露区域的外围；它不适用于三维亚微细加工。因此，我们开发了一种利用控制光刻胶反应时间常数的 CW 激光器的高精度曝光方法。这种方法可以通过使光化学反应的响应非线性地依赖于曝光强度来限制曝光区域。在我们的研究中，我们实现了通过使用波长为 532 nm 的 CW 激光来曝光最小宽度为 180 nm 的线图案，该宽度小于聚焦束斑直径。