Abstract

One of the promising approaches to solve the problem of increasing the efficiency for interelement connections consists in the use of integrated optical switching systems, whose main elements represent injection lasers with functionally integrated optical radiation modulators. Injection lasers make it possible to modulate the laser radiation by subpicosecond controlling pulses at a constant pumping current, as well as making it possible to implement the sources and modulators of optical radiation in a united A^IIIB^V nanoheterostructure with second-type heterojunctions. This work is devoted to the studies concerning the transport of charge carriers within a functionally integrated modulator laser with internal frequency modulation of the generated optical radiation using a proposed two-dimensional diffusion-drift model and a numerical simulation technique. The results of the numerical simulation of charge carrier transport in a modulator laser when the pumping current is switched on, as well as under pulsed variation of the controlling voltage, take the structural features, the transport effects, the mechanisms of stimulated and spontaneous radiative recombination, and the photon lifetime into account. It is shown that the maximum modulation frequency of laser radiation is determined by the subpicosecond time of the controlled spatial relocation of the charge-carrier density maxima in the quantum zones of the modulator laser, as well as by the photon lifetime in the laser resonator, and corresponds to the terahertz range. To increase the maximum modulation frequency, it is necessary to reduce the photon lifetime in the active zone of the modulator laser to values lower than 3 ps by changing the resonator’s parameters in a corresponding manner. The proposed model and the method of numerical simulation make it possible to optimize the parameters of a functionally integrated modulator laser, and to provide the required relationships between the maximum modulation frequency of the optical radiation, the modulation coefficient, and the density of the threshold pumping current.

中文翻译：

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具有光辐射频率调制的注入激光器中载流子传输的研究

摘要

解决增加元件间连接效率问题的一种有前途的方法是使用集成的光开关系统，其主要元件代表具有功能集成的光辐射调制器的注入激光器。注入激光使通过亚皮秒控制脉冲以恒定的泵浦电流调制激光辐射成为可能，并且有可能在统一的A ^III B ^V中实现光辐射的源和调制器具有第二类异质结的纳米异质结构。这项工作致力于使用拟议的二维扩散漂移模型和数值模拟技术，对功能集成的调制器激光器中的载流子进行传输，并对产生的光辐射进行内部频率调制。在泵浦电流接通时以及在控制电压的脉冲变化下，调制器激光器中载流子传输的数值模拟结果具有结构特征，传输效应，受激和自发辐射复合的机理，并考虑光子寿命。结果表明，激光辐射的最大调制频率由调制器激光器的量子区中载流子密度最大值的受控空间重定位的亚皮秒时间以及激光谐振器中的光子寿命决定，并对应于太赫兹范围 为了增加最大调制频率，有必要通过以相应的方式改变谐振器的参数，将调制器激光器有源区中的光子寿命降低到低于3 ps的值。提出的模型和数值模拟方法可以优化功能集成调制器激光器的参数，并提供光辐射的最大调制频率，调制系数，