Simple high energy laser photon irradiation is a handy tool to tune the functional properties of wide band gap oxide-based devices. Present study reports on the effects of laser photon irradiation on electrical transport behaviour of n-ZnO/p-Si p-n junctions. The n-type conductivity of ZnO was optimised by doping of stoichiometric amount of Al in ZnO. The n-ZnO/p-Si junctions were grown on p-Si (100) substrate by pulsed laser deposition. The structural property was analysed by X-ray diffraction. Morphological study was done using atomic force microscopy (AFM) which shows smooth and mono-dispersed surfaces of the p-n junction. The current-voltage (I-V) characteristic of the n-ZnO/p-Si devices have been measured at room temperature in the dark and under illumination. Moreover, the effects of 532 nm visible laser light irradiation on the electric parameter of n-AZO/p-Si p-n junctions were investigated. The characteristic parameters of the junctions such as barrier height, ideality factor and series resistance were determined from the current-voltage measurement. The results show a promise of ZnO based diode structure for its optoelectronic applications.

中文翻译：

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光子辐照对光电器件n-ZnO / p-Si结的电性能的影响

简单的高能激光光子辐照是调节宽带隙氧化物基器件的功能特性的便捷工具。本研究报告了激光光子辐照对n -ZnO / p -Si pn结的电输运行为的影响。通过在ZnO中掺杂化学计量的Al，可以优化ZnO的n型电导率。所述Ñ -ZnO / p -Si结生长在p通过脉冲激光沉积-Si（100）衬底。通过X射线衍射分析结构性能。使用原子力显微镜（AFM）进行了形态学研究，显示了pn表面的光滑和单分散交界处。n -ZnO / p -Si器件的电流-电压（IV）特性已在室温下在黑暗中和光照下进行了测量。此外，研究了532 nm可见激光辐照对n -AZO / p -Si pn结电学参数的影响。由电流-电压测量确定结的特征参数，例如势垒高度，理想因子和串联电阻。结果表明，基于ZnO的二极管结构可用于其光电应用。