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Impact of body-biasing for negative capacitance field-effect transistor
Journal of Physics Communications Pub Date : 2020-09-22 , DOI: 10.1088/2399-6528/abb751
Hyun Woo Kim 1 , Daewoong Kwon 2
Affiliation  

In this study, the body-bias effects on negative capacitance FET (NCFET) are analyzed using technology computer-aided design (TCAD) device simulation with drift-diffusion model and Landau-Khalatnikov. To understand the physical origin the effects, electrical characteristics are evaluated with various ferroelectric (FE) layer thickness for NCFET as compared to the conventional MOSFET. With thicker FE layer, the total capacitance (C Total) becomes larger, while MOS capacitance (C MOS) is sustained, leading to voltage amplification because the difference between C FE and C MOS gets smaller. It gives the strong gate controllability and less sensitivity for threshold voltage (V TH) according to body-bias variations unlike the conventional MOSFET. Moreover, it is confirmed that the surface band-bending at the interface of NCFET is rarely changed with changing body-bias from 0V to −3V.



中文翻译:

体偏置对负电容场效应晶体管的影响

在这项研究中,使用带有漂移扩散模型和 Landau-Khalatnikov 的技术计算机辅助设计 (TCAD) 器件仿真分析了体偏置对负电容 FET (NCFET) 的影响。为了了解这些影响的物理起源,与传统 MOSFET 相比,使用 NCFET 的各种铁电 (FE) 层厚度来评估电气特性。FE层越厚,总电容(C Total)越大,而MOS电容(C MOS)保持不变,导致电压放大,因为C FEC MOS之间的差异变小。它提供了强大的栅极可控性和对阈值电压(V TH ) 与传统 MOSFET 不同,根据体偏置变化。此外,证实了在 NCFET 界面处的表面能带弯曲很少随着体偏置从 0V 变化到 -3V 而改变。

更新日期:2020-09-22
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