In this paper the roles of texturing and thickness of different buffer layers employed in the fabrication of Fe(Se,Te) coated conductors are studied. Fe(Se,Te) thin films were deposited either on rolling assisted biaxially textured substrates substrates with highly textured CeO 2 buffer layer and on HASTELLOY ® C276 substrates with a randomly oriented native oxide grown through different oxidizing processes. It was found that the buffer layer has to be both thick enough to block Ni interdiffusion from the metallic tape to the Fe(Se,Te) overlayer, and textured enough to ensure good in-plane alignment of the superconducting film, and consequently good critical current densities (J c ). The best results in terms of critical temperature (T c ) and critical current were obtained using a highly textured 350 nm thick CeO 2 buffer layer, but a fairly good J c of 1.2 10 4 A cm −2 in self field at 5 K was also o...

中文翻译：

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氧化物缓冲层的织构化和厚度在Fe（Se，Te）涂层导体超导性能中的作用

在本文中，研究了Fe（Se，Te）涂层导体的制造过程中不同缓冲层的纹理化和厚度的作用。Fe（Se，Te）薄膜沉积在具有高织构化CeO 2缓冲层的轧制辅助双轴织构化基材上，以及沉积在具有通过不同氧化工艺生长的随机取向的天然氧化物的CAST基底上。发现缓冲层必须既厚又足以阻止Ni从金属带向Fe（Se，Te）上层的相互扩散，又要有足够的织构以确保超导膜的良好面内对准，因此具有良好的临界性。电流密度（J c）。使用高度织构化的350 nm厚CeO 2缓冲层可获得在临界温度（T c）和临界电流方面的最佳结果，