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Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.2 ) Pub Date : 2020-08-10 , DOI: 10.1109/tcpmt.2020.3015658
Woojin Ahn , Davide Cornigli , Dhanoop Varghese , Luu Nguyen , Srikanth Krishnan , Susanna Reggiani , Muhammad Ashraful Alam

Molding compounds (MCs) are widely used as an encapsulation material for integrated circuits; however, traditional MCs are susceptible to moisture and charge spreading over time. The increase in dissipation factor due to the increase of parasitic electrical conductivity ( $\sigma$ ) and the decrease in dielectric strength $(E_{\mathrm {MC}}^{\mathrm {Crit}})$ restrict their applications. Thus, a fundamental understanding of moisture transport as a function of MC parameters is essential to suppress moisture diffusion and broaden their applications. In this article, we: 1) propose a generalized effective medium and solubility (GEMS) Langmuir model by identifying a set of parameters that control water uptake as a function of filler configuration and relative humidity; 2) investigate the dominant impact of reacted-water on $\sigma $ through numerical simulations, mass-uptake, and dc conductivity measurements; 3) investigate electric field distribution to explain how moisture ingress reduces $E_{\mathrm {MC}}^{\mathrm {Crit}}$ ; and finally 4) optimize the filler configuration to lower the dissipation factor, and enhance $E_{\mathrm {MC}}^{\mathrm {Crit}}$ . The GEMS-Langmuir model can be used for any application (e.g., photovoltaics, biosensors) where moisture ingress leads to reliability challenges.

中文翻译:

填料形态和水分对HV-ICs封装用环氧树脂复合材料的耗散因数和临界电场的影响

模塑料(MCs)被广泛用作集成电路的封装材料。但是,传统的MC易受潮气和电荷随时间扩散的影响。耗散因数的增加归因于寄生电导率的增加( $ \ sigma $ )并降低绝缘强度 $(E _ {\ mathrm {MC}} ^ {\ mathrm {Crit}})$ 限制其应用。因此,对水分传输作为MC参数的函数的基本了解对于抑制水分扩散和扩大其应用至关重要。在本文中,我们:1)通过确定一组参数来控制广义水的有效介质和溶解度(GEMS)Langmuir模型,该参数控制吸水率与填料构型和相对湿度之间的关系;2)研究反应水对水的主要影响 $ \ sigma $ 通过数值模拟,质量吸收和直流电导率测量;3)研究电场分布以解释水分减少的方式 $ E _ {\ mathrm {MC}} ^ {\ mathrm {Crit}} $ ; 最后4)优化填充物配置,以降低耗散系数并增强 $ E _ {\ mathrm {MC}} ^ {\ mathrm {Crit}} $ 。GEMS-Langmuir模型可用于水分进入导致可靠性挑战的任何应用(例如,光伏,生物传感器)。
更新日期:2020-09-22
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