Low-temperature fabrication of thin-film dielectrics is essential for various applications including flexible/stretchable electronics, monolithic three-dimensional integrated circuits, and large-area sensors/displays. Silicon dioxide is one of the most extensively used dielectric materials, but conventional deposition methods such as plasma-enhanced chemical vapor deposition and atomic layer deposition require relatively high temperatures. In this study, a high-quality SiO₂ thin film was fabricated at low temperatures below 150 °C using sputtering and hydrogen plasma treatment. The sputtered SiO₂ thin film exhibited low leakage current (3 × 10^–7 A/cm² at 3 MV/cm) and a high breakdown field (11.33 MV/cm). After hydrogen plasma treatment was carried out under optimized conditions, the interface trap density between Si and sputtered SiO₂ was minimized to 7 × 10¹¹ cm^–2 eV^–1, which is comparable to the corresponding value for thermally grown SiO₂. The results of X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy confirmed that the hydrogen treatment effectively passivates dangling bonds and reduces the portion of oxygen-deficient species.

中文翻译：

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氢等离子体处理的低温溅射高质量氧化硅薄膜的低温制造（≤150°C）

薄膜电介质的低温制造对于包括柔性/可拉伸电子设备，单片三维集成电路和大面积传感器/显示器在内的各种应用都是必不可少的。二氧化硅是使用最广泛的介电材料之一，但是常规的沉积方法（如等离子体增强化学气相沉积和原子层沉积）需要相对较高的温度。在这项研究中，通过溅射和氢等离子体处理，在低于150°C的低温下制造了高质量的SiO ₂薄膜。溅射的SiO ₂薄膜具有低漏电流（3×10 ^–7 A / cm ²3 MV / cm）和高击穿场（11.33 MV / cm）。在最佳条件下进行氢等离子体处理后，Si和溅射的SiO ₂之间的界面陷阱密度最小化为7×10 ¹¹ cm ^–2 eV ^–1，这与热生长的SiO ₂的相应值相当。X射线光电子能谱和二次离子质谱的结果证实，氢处理有效地钝化了悬空键并减少了缺氧物种的比例。