Lithium zirconium phosphate (LiZr₂P₃O₁₂) thin films have been prepared on platinized silicon substrates via a chemical solution deposition approach with processing temperatures between 700°C and 775°C. Films that were subject to a single high‐temperature anneal were found to crystallize at temperatures above 725°C. Crystallization was observed in films annealed after each deposited layer at 700°C and above. In both cases, grain size was found to increase with annealing temperature. Ion conductivity was found to increase with annealing temperature in singly annealed films. In per‐layer annealed films ion conductivity was found to initially increase then decrease with increasing annealing temperature. A maximum ion conductivity of 1.6 × 10⁻⁶ S/cm was observed for the singly annealed 775°C condition, while a maximum ion conductivity of 5.8 × 10⁻⁷ S/cm was observed for the 725°C per‐layer annealed condition. These results are consistent with an increasing influence of cross‐plane, internal interface resistance and vapor phase carrier loss in the per‐layer annealed samples. This work demonstrates that post‐deposition processing methods can strongly affect the ion conducting properties of LiZr₂P₃O₁₂ thin films.

中文翻译：

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温度和工艺对溶液沉积的磷酸锂锆（LiZr2P3O12）薄膜的锂离子电导率的影响

磷酸锂锆（LiZr ₂ P ₃ O ₁₂）薄膜已通过化学溶液沉积方法在700°C至775°C的处理温度下在铂硅衬底上制备。发现经过单次高温退火的薄膜会在725°C以上的温度下结晶。在每个沉积层在700°C及更高温度下退火后的薄膜中观察到结晶。在两种情况下，均发现晶粒尺寸随退火温度的增加而增加。发现单退火膜的离子电导率随退火温度的升高而增加。在每层退火的膜中，发现离子电导率先随退火温度的升高而先升高然后降低。最大离子电导率为1.6×10 ^-6 在单退火的775°C条件下 观察到S / cm，而在725°C的每层退火条件下观察到最大离子电导率为5.8×10 ^-7 S / cm。这些结果与每层退火样品中的横断面，内部界面电阻和汽相载流子损失的增加影响相一致。这项工作表明，沉积后处理方法会严重影响LiZr ₂ P ₃ O ₁₂薄膜的离子导电性能。