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Top-down fabrication of bromine doped Bi2O3 nanowires with efficient charge separation for photoelectrochemical application
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2020-09-21 , DOI: 10.1016/j.physb.2020.412587
Jun Shang , Yanjun Gao , Huige Chen , Xianwei Wang

Photoanode material, as the core component of photoelectrochemical cell, has attracted great research interest. Here, bromine doped Bi2O3 nanowires (BBON) are achieved through a simple top-down method. Bromine doping changes the chemical environment of bismuth and oxygen atoms, and also changes the band edge position. As a result, BBON photoanode with efficient charge separation shows excellent photoelectrochemical and photocatalytic activity. The electricity generation property of BBON in the photoelectrochemical cell system is investigated. The short-circuit current density (Jsc) and open-circuit voltage (Voc) are measured to be 0.6045 μA/cm2 and 0.318 V, which is higher than that of bulk Bi2O3 photoanode. BBON is a possible candidate photoanode material and provides potential for electricity generation and pollutants degradation.



中文翻译:

自上而下的溴掺杂Bi 2 O 3纳米线的制备及其在光电化学应用中的有效电荷分离

光电阳极材料作为光电化学电池的核心部件,引起了人们极大的研究兴趣。在这里,通过简单的自上而下的方法可以实现掺杂溴的Bi 2 O 3纳米线(BBON)。溴掺杂改变了铋和氧原子的化学环境,也改变了能带边缘的位置。结果,具有有效电荷分离的BBON光电阳极显示出优异的光电化学和光催化活性。研究了BBON在光电化学电池系统中的发电特性。测得的短路电流密度(J sc)和开路电压(V oc)为0.6045μA/ cm 2和0.318 V,高于体相Bi 2 O 3光电阳极。BBON是一种可能的光阳极材料,具有发电和污染物降解的潜力。

更新日期:2020-09-22
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