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Chromium Doping of Ta3N5 Thin Films via Thermal Nitridation of Sputtered Tantalum Oxide Films
Materials Chemistry and Physics ( IF 4.6 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.matchemphys.2020.123838
Sam Macartney , Rong Liu , Richard Wuhrer , Leigh R. Sheppard

Abstract The effects of chromium doping on magnetron sputtered and thermally annealed Ta3N5 thin films have been investigated for the first time. The structural and compositional evolution of these films were closely investigated using XRD, SEM and SIMS. A simple mechanism for the incorporation of chromium into the Ta3N5 lattice was described based on kinetic experiments and SIMS analysis. Some basic recommendations can be made regarding the optimal method of preparing Cr–Ta3N5, however there is still much work to be done in characterising Cr–Ta3N5 with appreciable properties. In particular, this investigation indicates poor Cr solubility in Ta3N5 in spite of the favourable ionic radius.

中文翻译:

通过溅射氧化钽薄膜的热氮化对 Ta3N5 薄膜进行铬掺杂

摘要 首次研究了铬掺杂对磁控溅射和热退火 Ta3N5 薄膜的影响。使用 XRD、SEM 和 SIMS 仔细研究了这些薄膜的结构和成分演变。基于动力学实验和 SIMS 分析描述了将铬结合到 Ta3N5 晶格中的简单机制。可以就制备 Cr-Ta3N5 的最佳方法提出一些基本建议,但在表征具有可观性能的 Cr-Ta3N5 方面仍有许多工作要做。尤其是,这项研究表明,尽管具有有利的离子半径,但 Cr 在 Ta3N5 中的溶解度很差。
更新日期:2021-01-01
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