Abstract We fabricate nonpolar InGaN/GaN single quantum-well based a-plane nanopillar green light-emitting diode (LED). The top-down fabrication method was used for fabricating nanopillar LED from the planar LED, where self-aligned In3Sn nanodots were used as an etching mask. Fabricated nanopillars have high yield with large height-to-diameter aspect ratio found by scanning-electron-microscopy characteristics. The size of nanopillars depends on the size of In3Sn nanodots which are fabricated from the ITO (indium tin oxide) thin film by 3% HCl solution. It is systematically investigated that the size of nanodots depends on the ITO thickness rather than the etching time. In order to achieve uniform current injection into nanopillars, a p-type transparent ITO contact is selectively deposited on the top of each nanopillar. The ITO contact layer consists of a slanted oblique-angle (85○/−85○) layer followed by a thick blanket layer for uniform current distribution. The macroscopic optoelectronic characteristics show the uniform current distribution over the chip area, which is also interactively explained.

中文翻译：

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使用自对准 In3Sn 纳米点制造的非极性 GaN 基纳米柱绿色发光二极管 (LED)

摘要 我们制造了基于非极性 InGaN/GaN 单量子阱的 a 面纳米柱绿色发光二极管 (LED)。自上而下的制造方法用于从平面 LED 制造纳米柱 LED，其中自对准 In3Sn 纳米点用作蚀刻掩模。通过扫描电子显微镜特征发现，制造的纳米柱具有高产率和大高度直径纵横比。纳米柱的尺寸取决于由 ITO（氧化铟锡）薄膜通过 3% HCl 溶液制成的 In3Sn 纳米点的尺寸。系统地研究了纳米点的尺寸取决于 ITO 厚度而不是蚀刻时间。为了实现均匀的电流注入到纳米柱中，p 型透明 ITO 触点被选择性地沉积在每个纳米柱的顶部。ITO 接触层由倾斜的斜角 (85○/-85○) 层组成，然后是用于均匀电流分布的厚毯层。宏观光电特性显示了芯片区域上均匀的电流分布，这也有交互解释。