Generation of random numbers is one of the most important steps in cryptographic algorithms. High endurance, high performance and low energy consumption are the attractive features offered by the Magnetic Tunnel Junction (MTJ) devices. Therefore, they have been considered as one of the promising candidates for next-generation digital integrated circuits. In this paper, a new circuit design for true random number generation using MTJs is proposed. Our proposed circuit offers a high speed, low power and a truly random number generation. In our design, we employed two MTJs that are configured in special states. Generated random bit at the output of the proposed circuit is returned to the write circuit to be written in the relevant cell for the next random generation. In a random bitstream, all bits must have the same chance of being “0”or “1”. We have proposed a new XOR-based method in this paper to resolve this issue in multiple random generators that produce truly random numbers with a different number of ones and zeros in the output stream. The simulation results using a 45[Formula: see text]nm CMOS technology with a special model of MTJ validated the advantages offered by the proposed circuit.

中文翻译：

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一种用于安全密码学的低成本高可靠性自旋电子真随机数发生器电路

随机数的生成是密码算法中最重要的步骤之一。高耐用性、高性能和低能耗是磁性隧道结 (MTJ) 器件提供的有吸引力的特性。因此，它们被认为是下一代数字集成电路的有希望的候选者之一。在本文中，提出了一种使用 MTJ 生成真随机数的新电路设计。我们提出的电路提供高速、低功耗和真正的随机数生成。在我们的设计中，我们使用了两个配置为特殊状态的 MTJ。在建议电路的输出端生成的随机位返回到写入电路，以写入相关单元以用于下一次随机生成。在随机比特流中，所有比特必须有相同的机会成为“0”或“1”。我们在本文中提出了一种新的基于 XOR 的方法来解决多个随机生成器中的这个问题，这些随机生成器在输出流中生成具有不同数量的 1 和 0 的真正随机数。使用具有特殊 MTJ 模型的 45[公式：见正文]nm CMOS 技术的仿真结果验证了所提出的电路提供的优势。