The evolution of electrical resistance as function of defect concentration is examined for the unipolar n-conducting oxides CdO, β-Ga2O3, In2O3, SnO2and ZnO in order to explore the predictions of the amphoteric defect model. Intrinsic defects are introduced by ion irradiation at cryogenic temperatures, and the resistance is measured in-situ by current-voltage sweeps as a function of irradiation dose. Temperature dependent Hall effect measurements are performed to determine the carrier concentration and mobility of the samples before and after irradiation. After the ultimate irradiation step, the Ga2O3and SnO2samples have both turned highly resistive. In contrast, the In2O3and ZnO samples are ultimately found to be less resistive than prior to irradiation, however, they both show an increased resistance at intermediate doses. Based on thermodynamic defect charge state transitions computed by hybrid density functional theory, a model expanding on the current amphoteric defect model is proposed.

中文翻译：

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一系列宽带隙氧化物材料的低温离子辐照两性缺陷模型的实验探索

为了探索两性缺陷模型的预测，研究了单极 n 导电氧化物 CdO、β-Ga2O3、In2O3、SnO2 和 ZnO 的电阻随缺陷浓度的演变。在低温下通过离子辐照引入固有缺陷，并通过电流-电压扫描原位测量电阻作为辐照剂量的函数。执行温度相关的霍尔效应测量以确定辐射前后样品的载流子浓度和迁移率。在最终的辐照步骤之后，Ga2O3 和 SnO2 样品都变成了高电阻。相比之下，最终发现 In2O3 和 ZnO 样品的电阻比辐照前要小，但是，它们在中等剂量下都显示出增加的电阻。