Tunnel Field Effect Transistors (TFETs) are potential semiconductor devices which offer low off current, sub-60 mV dec −1 subthreshold swing and significantly alleviated short channel effects, as compared to downscaled MOSFETs. However, the low on current in TFETs has been a major challenge which has propelled the direction of research towards proposals of novel geometries. The emergence of a number of geometries and their detailed optimizations creates a number of challenges for selecting the best one among them. This work presents the different challenges and offers an effective solution through the discussion involving a figure of merit.

中文翻译：

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观点—低功率应用中TFET的性能评估：挑战与前景

与缩小的MOSFET相比，隧道场效应晶体管（TFET）是潜在的半导体器件，可提供低截止电流，低于60 mV dec -1的亚阈值摆幅，并显着减轻了短沟道效应。然而，TFET中的低电流一直是一个重大挑战，这已将研究方向推向了新颖几何形状的提议。许多几何图形的出现及其详细的优化为在其中选择最佳几何图形带来了许多挑战。这项工作提出了不同的挑战，并通过涉及绩效指标的讨论提供了有效的解决方案。