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Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices.
Nature Communications ( IF 16.6 ) Pub Date : 2020-09-21 , DOI: 10.1038/s41467-020-18380-1
Chang Yi 1 , Chao Liu 1 , Kaichuan Wen 1 , Xiao-Ke Liu 2 , Hao Zhang 1 , Yong Yu 2 , Ning Fan 1 , Fuxiang Ji 2 , Chaoyang Kuang 2 , Bo Ma 1 , Cailing Tu 1 , Ya Zhang 1 , Chen Xue 3 , Renzhi Li 1 , Feng Gao 2 , Wei Huang 1, 3 , Jianpu Wang 1
Affiliation  

Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ-CsPbI3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications.



中文翻译:

用于高效深红色发光器件的γ-CsPbI3 薄膜的中间相辅助低温形成。

黑相CsPbI 3对光电器件具有吸引力,但通常它具有高形成能并且需要300°C以上的退火温度。通过在前体中添加 HI 可以显着降低形成能。然而,由于高陷阱密度和低光致发光量子效率,所得薄膜不适合发光应用,并且低温形成机制尚不清楚。在这里,我们展示了沉积γ- CsPbI 3的一般方法通过添加有机铵阳离子,在 100°C 下形成具有高光致发光量子效率的薄膜,所得发光二极管的外部量子效率为 10.4%,同时抑制了效率滚降。我们发现低温结晶过程是由于低维中间态的形成,然后是离子间交换。这项工作提供了在低温下为 CsPbI 3器件应用调整相变路径的前景。

更新日期:2020-09-21
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