The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN. Further transport measurements reveal that the sub-7-nm-wide zigzag GNRs exhibit openings of the bandgap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. An obvious conductance peak is observed in the transfer curves of 8- to 10-nm-wide zigzag GNRs, while it is absent in most armchair GNRs. Zigzag GNRs exhibit a small magnetic conductance, while armchair GNRs have much higher magnetic conductance values. This integrated lateral growth of edge-specific GNRs in h-BN provides a promising route to achieve intricate nanoscale circuits.

石墨烯纳米带（GNR）和六方氮化硼（h-BN）的平面内集成生长可以为实现原子厚度的集成电路提供有希望的途径。但是，在h-BN晶格中制造边缘特异性GNR仍然是一个重大挑战。在这里，我们开发了一种两步生长方法，并成功地实现了嵌入h-BN中的5纳米以下之字形和扶手椅GNR。进一步的运输测量表明，亚7纳米宽的之字形GNR的带隙开口与其宽度成反比，而较窄的扶手椅型GNR的带隙-宽度关系表现出一些波动。在宽度为8至10 nm的之字形GNR的传输曲线中观察到一个明显的电导峰，而在大多数扶手椅式GNR中却没有。之字形GNR的磁导率很小，而扶手椅型GNR具有更高的磁导率值。h-BN中边缘特异性GNR的这种整合侧向生长为实现复杂的纳米级电路提供了有希望的途径。