Atomically thin molybdenum disulfide (MoS₂) is a promising semiconductor material for integrated flexible electronics due to its excellent mechanical, optical and electronic properties. However, the fabrication of large-scale MoS₂-based flexible integrated circuits with high device density and performance remains a challenge. Here, we report the fabrication of transparent MoS₂-based transistors and logic circuits on flexible substrates using four-inch wafer-scale MoS₂ monolayers. Our approach uses a modified chemical vapour deposition process to grow wafer-scale monolayers with large grain sizes and gold/titanium/gold electrodes to create a contact resistance as low as 2.9 kΩ μm⁻¹. The field-effect transistors are fabricated with a high device density (1,518 transistors per cm²) and yield (97%), and exhibit high on/off ratios (10¹⁰), current densities (~35 μA μm⁻¹), mobilities (~55 cm² V⁻¹ s⁻¹) and flexibility. We also use the approach to create various flexible integrated logic circuits: inverters, NOR gates, NAND gates, AND gates, static random access memories and five-stage ring oscillators.

原子薄的二硫化钼（MoS ₂）由于其优异的机械，光学和电子特性，是用于集成柔性电子产品的有希望的半导体材料。然而，具有高器件密度和性能的大规模基于MoS ₂的柔性集成电路的制造仍然是挑战。在这里，我们报告了使用四英寸晶圆级MoS ₂单层在柔性基板上制造基于透明MoS ₂的晶体管和逻辑电路的过程。我们的方法使用改进的化学气相沉积工艺来生长具有大晶粒尺寸的晶圆级单层膜和金/钛/金电极，以产生低至2.9kΩμm ^-1的接触电阻。场效应晶体管具有高器件密度的制造（每厘米1518个晶体管²和产率（97％），并表现出高）的开/关比（10 ¹⁰），电流密度（〜35μA微米^-1），迁移率（〜55 cm ²  V ^-1  s ^-1）和柔韧性。我们还使用该方法来创建各种灵活的集成逻辑电路：反相器，NOR门，NAND门，AND门，静态随机存取存储器和五级环形振荡器。