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Superconductivity of Topological Surface States and Strong Proximity Effect in Sn1–xPbxTe‐Pb Heterostructures
Advanced Materials ( IF 29.4 ) Pub Date : 2020-09-21 , DOI: 10.1002/adma.202003054 Hao Yang , Yao‐Yi Li , Teng‐Teng Liu , Huan‐Yi Xue , Dan‐Dan Guan , Shi‐Yong Wang , Hao Zheng , Can‐Hua Liu , Liang Fu , Jin‐Feng Jia
中文翻译：
Sn1-xPbxTe-Pb异质结构中拓扑表面态的超导性和强邻近效应
Advanced Materials ( IF 29.4 ) Pub Date : 2020-09-21 , DOI: 10.1002/adma.202003054 Hao Yang , Yao‐Yi Li , Teng‐Teng Liu , Huan‐Yi Xue , Dan‐Dan Guan , Shi‐Yong Wang , Hao Zheng , Can‐Hua Liu , Liang Fu , Jin‐Feng Jia
Adv. Mater. 2019, 31, 1905582
The unit for the bias voltage in Figure 4a of the originally published article was incorrect. The corrected Figure 4a is shown below.
Figure 4a
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a) Typical dI/dV spectrum in the Sn1−xPbxTe region of a lateral Sn1−xPbxTe–Pb heterostructure.
中文翻译：
Sn1-xPbxTe-Pb异质结构中拓扑表面态的超导性和强邻近效应
进阶 母校 2019，31，1905582
最初发表的文章的图4a中的偏置电压单位不正确。校正后的图4a如下所示。
图4a
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a）在侧面Sn 1 - x Pb x Te-Pb异质结构的Sn 1- x Pb x Te区域中的典型d I / d V光谱。
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