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Complex internal faults of MgZn2 in Mg Zn binary alloy
Materials Characterization ( IF 4.7 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.matchar.2020.110659
Shuhui Lv , Rui Ma , Xin Qiu , Jiangcheng Jing , Xiaoling Lv , Qiang Yang

Abstract Complex internal planar faults in the MgZn2 phase of a binary Mg 6Zn alloy were thoroughly studied using transmission electron microscopy. Two staking faults lying on {10 1 ¯ 0}MgZn2 and {21 3 ¯ 0}MgZn2 planes were observed, with the latter one found to be able to be densely arranged in the whole MgZn2 phase, resulting in a new structure with a monoclinic structure, a = 1.71 nm, b = 2.12 nm, c = 4.05 nm, and β = 116°. Subsequently, stacking faults, stacking fault boundary as well as the evolved twin boundaries lead to many additional diffraction spots and even hexagonal diffraction holes in the corresponding SAED patterns.

中文翻译:

MgZn二元合金中MgZn2的复杂内部断层

摘要 使用透射电子显微镜对二元 Mg 6Zn 合金的 MgZn2 相中的复杂内部平面缺陷进行了深入研究。观察到位于{10 1 ¯ 0}MgZn2 和{21 3 ¯ 0}MgZn2 平面上的两个桩断层,发现后者能够在整个MgZn2 相中密集排列,形成单斜晶系的新结构结构,a = 1.71 nm,b = 2.12 nm,c = 4.05 nm,β = 116°。随后,堆垛层错、堆垛层错边界以及演化的孪晶边界在相应的 SAED 图案中导致许多额外的衍射点甚至六边形衍射孔。
更新日期:2020-11-01
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