Abstract

4H-silicon carbide ingots with high structural perfection have been grown by the modified Lely method (LETI method) on 100-mm-diameter seeds. Using our experimental data and theoretical analysis, we have systematized the key factors responsible for the degradation of the crystal structure of the ingots during the growth process. The formation of parasitic polytype inclusions in the early stages of growth has been shown to lead to the formation of antiphase boundaries and a mosaic substructure in the ingot.

中文翻译：

---

大直径碳化硅锭的结构完善

摘要

通过改进的Lely方法（LETI方法）在直径为100 mm的晶种上生长了4种结构高度完美的H-碳化硅锭。使用我们的实验数据和理论分析，我们将导致生长过程中铸锭晶体结构退化的关键因素进行了系统化。在生长的早期阶段，寄生多型夹杂物的形成已被证明可导致晶锭中形成反相边界和镶嵌亚结构。