Uniform carbon film was grown on silicon substrate treated by low energy electron at temperature of 60° in the methanol solution. The treatment was carried out to modify the silicon surface by electron irradiation of 50 eV using electron‐beam‐excited plasma. From the results of Raman and X‐ray diffraction spectra, it was confirmed that the film is crystalline carbon containing small amounts of diamond component. The I_D/I_G ratio and work function of carbon film increased with increasing treatment time of the silicon substrate. The increases of I_D/I_G ratio and work function suggest that the carbon film had greater concentration of diamond component. On the other hand, the surface roughness and work function of the silicon substrate increased due to an increase of treatment time. The variations of physical and electronic properties are attributed to carbon deposition during the growth process.

中文翻译：

---

通过化学溶液法在硅衬底上沉积均匀的碳膜

在甲醇溶液中，在60°C的温度下通过低能电子处理过的硅衬底上生长出均匀的碳膜。使用电子束激发等离子体通过50 eV的电子辐照来进行处理以修饰硅表面。根据拉曼和X射线衍射光谱的结果，可以确定该膜是含有少量金刚石成分的结晶碳。碳膜的I _D / I _G比和功函数随着硅基板处理时间的增加而增加。I _D / I _G的增加比率和功函数表明碳膜具有较高的金刚石成分浓度。另一方面，由于处理时间的增加，硅基板的表面粗糙度和功函数增加。物理和电子特性的变化归因于生长过程中的碳沉积。