A spin‐thermoelectric (STE) voltage is generated when a temperature gradient ∇T is applied to an element having a thin Pt layer coated on a magnetic substance. In this study, yttrium iron garnet (YIG) ferrimagnetic films prepared by liquid phase epitaxy (LPE) were tested as magnetic insulators. In addition, polycrystalline YIG slabs were tested to compare the STE voltages of film and slab samples. In a Pt coating and YIG film bilayer structure made by an ultrathin Pt layer of 1‐4 nm thickness and an LPE film of approximately 10 µm thickness, a large STE voltage of 600 µV was observed at a probe distance of 5 mm with a temperature difference ∆T of 30 K. On the other hand, the STE voltage of a Pt layer and YIG slab bilayer structure was 340 µV, which is roughly half of that of the Pt/YIG‐film element. The cause of the large voltage observed experimentally for the longitudinal spin Seebeck effect element incorporating an LPE YIG film was discussed mainly from the viewpoint of the Pt layer resistivity and the effects of YIG specimen surface conditions on crystallinity and the magnetization process.

中文翻译：

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纵向SSE元件中的自旋热电电压结合了LPE YIG薄膜和具有超薄Pt层的多晶YIG平板

当温度梯度∇产生的自旋热电（STE）电压Ť被施加到具有涂覆在磁性物质的薄Pt层的元件。在这项研究中，通过液相外延（LPE）制备的钇铁石榴石（YIG）亚铁磁性薄膜作为磁绝缘体进行了测试。此外，还对多晶YIG平板进行了测试，以比较薄膜和平板样品的STE电压。在由厚度为1-4 nm的超薄Pt层和厚度约为10 µm的LPE膜制成的Pt涂层和YIG薄膜双层结构中，在5 mm的探头距离和温度下观察到600伏的大STE电压差ΔT另一方面，Pt层和YIG平板双层结构的STE电压为340 µV，大约是Pt / YIG膜元件的STE电压的一半。主要从Pt层电阻率以及YIG试样表面条件对结晶度和磁化过程的影响的角度讨论了实验观察到的并入LPE YIG膜的纵向自旋塞贝克效应元件电压过高的原因。