The thin film of heat-sensitive materials has been widely concerned with the current trend of miniaturization and integration of sensors. In this work, Mn_1.56Co_0.96Ni_0.48O₄ (MCNO) thin films were prepared on SiO₂/Si substrates by sputtering with Mn–Co–Ni alloy target and then annealing in air at different temperatures (650–900 °C). The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) analysis indicated that the main crystalline phase of MCNO thin films was spinel crystal structure; the surface of the thin films was very dense and uniform. The electrical properties of the thin films were studied in the temperature range of–5–50 °C. The MCNO thin film with a low room temperature resistance R₂₅ of 71.1 kΩ and a high thermosensitive constant B value of 3305 K was obtained at 750 °C. X-ray photoelectron spectroscopy (XPS) analysis showed that the concentration of Mn³⁺ and Mn⁴⁺ cations in MCNO thin films is the highest when annealing temperature is 750 °C. The complex impedance analysis revealed internal conduction mechanism of the MCNO thin film and the resistance of the thin film was dominated by grain boundary resistance.

中文翻译：

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合金靶溅射制备Mn-Co-Ni-O薄膜

热敏材料的薄膜已经广泛地与当前传感器的小型化和集成化趋势有关。在这项工作中，在SiO _2上制备了Mn _1.56 Co _0.96 Ni _0.48 O ₄（MCNO）薄膜。/ Si衬底，通过用Mn-Co-Ni合金靶溅射，然后在不同温度（650-900°C）的空气中退火。X射线衍射（XRD）和场发射扫描电子显微镜（FE-SEM）分析表明，MCNO薄膜的主要晶相为尖晶石晶体结构。薄膜的表面非常致密且均匀。在–5–50°C的温度范围内研究了薄膜的电性能。在750℃下获得具有71.1kΩ的低室温电阻R ₂₅和3305K的高热敏常数B值的MCNO薄膜。X射线光电子能谱（XPS）分析表明，Mn ³⁺和Mn ⁴⁺的浓度当退火温度为750°C时，MCNO薄膜中的阳离子最高。复阻抗分析揭示了MCNO薄膜的内部传导机理，并且薄膜的电阻主要由晶界电阻决定。