Surface photovoltage (SPV) in p⁺-GaAs/p-GaAlAs/p-GaAs has been studied by establishing a multilayer model and measuring the SPV at room temperature. The model mainly considers surface recombination velocity, interface recombination velocity and the space charge region (SCR) at the surface of p⁺-GaAs. The SPV of the multilayer structure is shown to originate predominantly from the minority carrier diffusion, which caused photovoltage between the surface and bottom. Subsequently, the minority carrier diffusion lengths in p⁺-GaAs and in p-GaAs are obtained from fitting experimental data to the theoretical model. At the same time, the minority carrier diffusion length in p-GaAs is obtained by illuminating the backside (illuminating on p-GaAs) of the p⁺-GaAs/p-GaAlAs/p-GaAs. The p⁺-GaAs in p⁺-GaAs/p-GaAlAs/p-GaAs structure with different thickness are measured to show the variation of SPS with different thickness, but the experimental parameters are not affected. In multi-layer structure, the SPV contributed by different layers has a great difference with different dark saturation current density.

通过建立多层模型并在室温下测量 SPV，研究了p ⁺ -GaAs/p-GaAlAs/p-GaAs 中的表面光电压 (SPV) 。该模型主要考虑了p ⁺ -GaAs表面的表面复合速度、界面复合速度和空间电荷区（SCR）。显示多层结构的 SPV 主要源自少数载流子扩散，这导致表面和底部之间的光电压。随后，p ⁺ -GaAs 和 p-GaAs 中的少数载流子扩散长度是通过将实验数据拟合到理论模型中获得的。同时，通过照射p-GaAs的背面（照射p-GaAs）得到p-GaAs中的少数载流子扩散长度⁺ -GaAs/p-GaAlAs/p-GaAs。该p ⁺ P中-GaAs ⁺ -GaAs / P-的GaAlAs /对-砷化镓结构具有不同厚度的测量，以显示SPS的具有不同厚度的变化，但实验参数不受影响。在多层结构中，不同层贡献的SPV随暗饱和电流密度不同而有很大差异。