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Low-temperature positive magnetoresistance in ZnO-based heterostructures
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-09-17 , DOI: 10.1088/1361-6641/abab1d
X R Ma 1 , X H Zhang 2 , Y F Gao 1 , Q L Li 1 , K H Gao 1
Affiliation  

The positive magnetoresistance (MR) usually appears at cryogenic temperature in ZnO-based transport systems, the origin of which is reported to be related to the localized magnetic moment. Here we find a different origin of the positive MR in Zn 1− x Mg x O/ZnO heterostructures prepared by magnetron sputtering. The large positive MR is observed in all samples at 2 K. On increasing temperature, the observed positive MR is gradually suppressed and transformed into the negative MR at higher temperature. Similarly, the suppression of the positive MR also occurs in the samples with the higher electron density. The experimental data can be well described by applying a two-band model combined with the weak localization (WL) theory. This indicates that the observed positive MR originates from the impurity-band-related two-band transport, while the observed negative MR arises from the WL.

中文翻译:

ZnO基异质结构中的低温正磁电阻

正磁阻(MR)通常出现在基于ZnO的传输系统中的低温下,据报道其起源与局部磁矩有关。在这里,我们发现通过磁控溅射制备的Zn 1-x Mg x O / ZnO异质结构中正MR的不同来源。在2 K的所有样品中均观察到较大的正MR。随着温度的升高,观察到的正MR逐渐被抑制并在较高温度下转变为负MR。类似地,在具有较高电子密度的样品中也出现对正MR的抑制。通过应用结合弱定位(WL)理论的两波段模型可以很好地描述实验数据。这表明观察到的正MR来自与杂质带有关的两带传输,
更新日期:2020-09-20
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