Heteroepitaxial growth is critical for large-scale synthesis of diamond (111) substrates. In this study, the local initial epitaxial growth of diamond (111) on Ru/c-sapphire was investigated. As the economic viability of ruthenium (Ru) is more than that of iridium (Ir), a 150-nm Ru (0001) thin film was sputter-deposited on an Al2O3 (0001) substrate using a RF/DC magnetron sputtering system. X-ray diffraction analyses of the Ru film revealed the (0001) phase orientation with high crystalline quality. Both bias-enhanced nucleation and initial heteroepitaxial growth of diamond were realized via antenna-edge-type microwave plasma chemical vapor deposition. After 30 min of heteroepitaxial growth, the crystallite (diameter ∼500 nm) with a smooth surface was observed through scanning electron microscopy. Electron backscattering diffraction (EBSD) orientation mapping indicated the presence of the highly oriented diamond (111) crystallite. The epitaxial orientations between diamond (111) and Ru were determined as [111]diamond//[0001]Ru and [11 2 ¯]diamond//[10 1 ¯0]Ru. The EBSD pole-figure pattern represented the formation of a double positioning defect. This study demonstrated the feasibility of heteroepitaxial growth of diamond (111) on Ru, which provides a more economically viable approach to fabricating large-size diamond substrates.

中文翻译：

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通过天线边缘型微波等离子体化学气相沉积在 Ru (0001)/c-蓝宝石上局部初始异质外延生长金刚石 (111)

异质外延生长对于金刚石 (111) 基材的大规模合成至关重要。在这项研究中，研究了金刚石 (111) 在 Ru/c-蓝宝石上的局部初始外延生长。由于钌 (Ru) 的经济可行性高于铱 (Ir)，因此使用 RF/DC 磁控溅射系统将 150 纳米 Ru (0001) 薄膜溅射沉积在 Al2O3 (0001) 基板上。Ru薄膜的X射线衍射分析揭示了具有高结晶质量的（0001）相取向。金刚石的偏置增强成核和初始异质外延生长都是通过天线边缘型微波等离子体化学气相沉积实现的。异质外延生长 30 分钟后，通过扫描电子显微镜观察到具有光滑表面的微晶（直径约 500 nm）。电子背散射衍射 (EBSD) 取向映射表明存在高度取向的金刚石 (111) 微晶。金刚石(111)和Ru之间的外延取向确定为[111]金刚石//[0001]Ru和[11 2 ¯]金刚石//[10 1 ¯0]Ru。EBSD 极图模式代表了双重定位缺陷的形成。该研究证明了在 Ru 上异质外延生长金刚石 (111) 的可行性，这为制造大尺寸金刚石基板提供了一种更经济可行的方法。