Linear dielectrics are promising candidates for high-performance energy storage applications with high efficiency, excellent thermal stability, and high reliability due to their low loss, high dielectric breakdown strength, and stable dielectric properties, which are independent of the electric field and temperature. However, their low dielectric constant or polarization restricts the stored electrical energy, which makes them less attractive for high energy density storage applications compared to relaxor ferroelectrics or anti-ferroelectrics. Here, we realized an ultrahigh energy density (Ue ∼ 59.4 J/cm3) and high efficiency (∼89%) simultaneously in the Ca0.74Sr0.26Zr0.7Ti0.3O3 (CSZT) linear dielectric thin film, which are competitive with those of other lead-based and lead-free dielectric films deposited on Si wafers. Moreover, the CSZT thin-film capacitor exhibits great thermal stability with the Ue variation less than 3% from −90 °C to 170 °C and good fatigue endurance with the Ue variation of 4.5% after 3 × 107 cycles at 10 kHz. This work also reveals that the exploration of advanced linear dielectric thin films with a medium dielectric constant would benefit from the development of high-performance energy-storage capacitors.

中文翻译：

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在硅衬底上的 Ca0.74Sr0.26Zr0.7Ti0.3O3 线性电介质薄膜中实现了高能量密度和高效率

线性电介质具有低损耗、高介电击穿强度和稳定的介电特性，不受电场和温度的影响，具有高效率、优异的热稳定性和高可靠性，是高性能储能应用的有希望的候选者。然而，它们的低介电常数或极化限制了存储的电能，与弛豫铁电体或反铁电体相比，这使得它们对高能量密度存储应用的吸引力较小。在这里，我们在 Ca0.74Sr0.26Zr0.7Ti0.3O3 (CSZT) 线性电介质薄膜中同时实现了超高能量密度（Ue ∼ 59.4 J/cm3）和高效率（∼89%），与沉积在硅晶片上的其他铅基和无铅介电薄膜。而且，CSZT 薄膜电容器表现出良好的热稳定性，从 -90°C 到 170°C，Ue 变化小于 3%，并且在 10 kHz 下 3 × 107 次循环后，Ue 变化为 4.5%，具有良好的疲劳耐久性。这项工作还表明，具有中等介电常数的先进线性电介质薄膜的探索将受益于高性能储能电容器的发展。