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Twin defect-triggered deformations and Bi segregation in GaAs/GaAsBi core–multishell nanowires
Applied Physics Letters ( IF 4 ) Pub Date : 2020-09-14 , DOI: 10.1063/5.0013094
Teruyoshi Matsuda 1 , Kyohei Takada 1 , Kohsuke Yano 1 , Satoshi Shimomura 1 , Yumiko Shimizu 2 , Fumitaro Ishikawa 1
Affiliation  

We investigated microstructural deformations and Bi segregation in GaAs/GaAsBi/GaAs core–multishell heterostructures, which were triggered by the existence of twin defects. We observed Bi segregation at the interface of the twin defect interface in the GaAsBi shell. The phenomenon produced a horizontally spread Bi-accumulated nanostructure in the nanowire, which is probably induced by the large lattice mismatch between GaAs and GaAsBi. Bi is expected to penetrate through the twin defect interface, which results in the existence of Bi along twin defects and also inside the GaAs core. The existence of twin defects induced structural deformations and resulted in the formation of corrugated complex sidewall surfaces on the nanowire.

中文翻译:

GaAs/GaAsBi核-多壳纳米线中的双缺陷触发变形和Bi偏析

我们研究了由孪晶缺陷的存在引发的 GaAs/GaAsBi/GaAs 核-多壳异质结构中的微观结构变形和 Bi 偏析。我们在 GaAsBi 壳中双缺陷界面的界面处观察到 Bi 偏析。这种现象在纳米线中产生了水平分布的 Bi 累积纳米结构,这可能是由 GaAs 和 GaAsBi 之间的大晶格失配引起的。预计 Bi 会穿透孪晶缺陷界面,这导致 Bi 沿着孪晶缺陷存在,也在 GaAs 核内部存在。双缺陷的存在导致结构变形并导致在纳米线上形成波纹复杂的侧壁表面。
更新日期:2020-09-14
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