We observe strong spin-orbit interactions in a two-dimensional electron system formed on $\mathrm{SrTi}{\mathrm{O}}_3\left(001\right)$ films grown epitaxially on p-Si(001). High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and $\mathrm{SrTi}{\mathrm{O}}_3$. Strain mapping analysis shows in-plane strain in $\mathrm{SrTi}{\mathrm{O}}_3$ very close to the interface. Analysis of the low temperature magnetoconductance measurements reveals that both quantum interference and electron-electron interactions are important. The contributions of these two quantum phenomena to the temperature and magnetic field dependence of the conductance and Hall effect are separated. The electron system has carrier concentrations larger than ${10}^{14}\mathrm{c}{\mathrm{m}}^{-2}$, appears to be confined within ∼4 nm, and has an estimated spin-splitting energy ∼12 meV.

中文翻译：

---

在p-Si（001）上外延生长的SrTiO3（001）薄膜中形成的相关二维电子系统中的强自旋轨道相互作用

我们观察到在形成的二维电子系统中强烈的自旋轨道相互作用 $\mathrm{锶钛}{\mathrm{Ø}}_3（001）$薄膜在p-Si（001）上外延生长。高分辨率透射电子显微镜和相关分析技术揭示了硅与硅之间的清晰界面$\mathrm{锶钛}{\mathrm{Ø}}_3$。应变映射分析显示面内应变$\mathrm{锶钛}{\mathrm{Ø}}_3$非常靠近界面。低温磁导测量的分析表明，量子干扰和电子-电子相互作用都非常重要。这两种量子现象对电导率和霍尔效应的温度和磁场依赖性的贡献是分开的。电子系统的载流子浓度大于${10}^{14}\mathrm{C}{\mathrm{米}}^{-2}$，似乎限制在〜4nm之内，并且具有估计的自旋分裂能〜12meV。