The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO₂ thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. Deflection sensitivities were tuned with the gate bias and operating temperature for embedded AlGaN/GaN HFET and VO₂ thin film transducers, respectively. The GaN microcantilevers were excited with a piezoactuator in their linear and nonlinear oscillation regions of the fundamental oscillatory mode. In the linear regime, the maximum deflection sensitivity of piezotransistive AlGaN/GaN HFET reached up to a 0.5% change in applied drain voltage, while the responsivity of the piezoresistive VO₂ thin film based deflection transducer reached a maximum value of 0.36% change in applied drain current. The effects of the gate bias and the operation temperature on nonlinear behaviors of the microcantilevers were also experimentally examined. Static deflection sensitivity measurements demonstrated a large change of 16% in drain-source resistance of the AlGaN/GaN HFET, and a similarly high 11% change in drain-source resistance in the VO₂ thin film, corresponding to a 10 μm downward step bending of the cantilever free end.

中文翻译：

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嵌入在GaN微悬臂梁中的基于AlGaN / GaN HFET和VO2薄膜的偏转传感器的研究。

研究了在类似尺寸的GaN微悬臂梁上制备的压阻式AlGaN / GaN异质结场效应晶体管（HFET）和压阻VO ₂薄膜的静态和动态挠度转换性能。分别通过嵌入式AlGaN / GaN HFET和VO ₂薄膜换能器的栅极偏置和工作温度来调节偏转灵敏度。GaN微悬臂梁在其基本振荡模式的线性和非线性振荡区域中被压电致动器激励。在线性状态下，压阻式AlGaN / GaN HFET的最大偏转灵敏度在施加的漏极电压上变化高达0.5％，而压阻式VO ₂的响应度基于薄膜的偏转传感器在施加的漏极电流上达到最大值0.36％的变化。栅极偏置和操作温度对微悬臂梁非线性行为的影响也进行了实验研究。静态挠度灵敏度测量表明，AlGaN / GaN HFET的漏-源电阻发生了16％的大变化，而VO ₂薄膜中的漏-源电阻发生了类似的高11％的变化，对应于10μm向下弯曲悬臂的自由端。