Abstract We have investigated the properties of InGaZn6O9 thin films fabricated by radio frequency (RF) magnetron sputtering for the application to the electrodes in transparent thin film transistor (TTFT). The InGaZn6O9 thin films have been prepared with varying working pressure and RF power. It has been found that the InGaZn6O9 films have an amorphous structure and show a very smooth and featureless surface regardless of the deposition conditions. At optimized deposition condition, the InGaZn6O9 film shows an average transmittance of about 83.54% in the visible region and the sheet resistance of about 91.6 Ω/sq. The top gate InGaZnO4 TTFT device embedded with InGaZn6O9 electrode operates in enhanced mode with a threshold voltage of 1.1 V, a mobility of 3.48 cm2/Vs, an on-off ratio of > 104, and a sub-threshold slope of 0.9 V/decade. In addition, the optical transmittance of the TTFT device is observed about 85% at 550 nm wavelength.

中文翻译：

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射频磁控溅射制备全透明薄膜晶体管非晶透明InGaZn6O9电极特性

摘要 我们研究了通过射频 (RF) 磁控溅射制备的 InGaZn6O9 薄膜的性能，用于透明薄膜晶体管 (TTFT) 中的电极。InGaZn6O9 薄膜是在不同的工作压力和射频功率下制备的。已经发现，InGaZn6O9 膜具有非晶结构并且无论沉积条件如何都显示出非常光滑和无特征的表面。在优化的沉积条件下，InGaZn6O9 薄膜在可见光区的平均透射率约为 83.54%，薄层电阻约为 91.6 Ω/sq。嵌入 InGaZn6O9 电极的顶栅 InGaZnO4 TTFT 器件工作在增强模式，阈值为 1.1 V，迁移率为 3.48 cm2/Vs，开关比 > 104，亚阈值斜率为 0.9 V/decade .